Novel Control of the Synthesis and Band Gap of Zinc Aluminate (ZnAl2O4) by Using a DC/RF Sputtering Technique

被引：0
作者：
Asim Jilani
I. S. Yahia
M. Sh. Abdel-wahab
Attieh A. Al-ghamdi
Haya Alhumminay
机构：
[1] King Abdulaziz University,Center of Nanotechnology
[2] Ain Shams University,Nano
[3] King Khalid University,Science & Semiconductor Labs, Metallurgical Laboratory, Department of Physics, Faculty of Education
[4] University of Jeddah,Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Department of Physics, Faculty of Science
[5] King Abdulaziz University,Department of Physics, Faculty of Science
来源：
Silicon | 2018年 / 10卷
关键词：
Zinc aluminate (ZnAl; O; ); DC/RF magnetron sputtering; XRD/FESEM; Bandgap; Refractive index; Dielectric properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Zinc aluminate (ZnAl2O4) thin films have been deposited through direct current/radio frequency (DC/RF) magnetron sputtering by varying the applied power of an Aluminum (Al) target. The X-ray diffraction (XRD) pattern showed the formation of monophase ZnAl2O4 with spinel structure. Moreover, structural analysis like grain size, dislocation density, and lattice strain was calculated through the XRD obtained data. The surface morphological analysis through field emission scanning electron microscopy (FESEM) confirmed the formation of nano-size spinel ZnAl2O4. The transmittance of the ZnAl2O4 thin film was found to be dependent on the aluminum (Al) target power. An inverse relation was noticed between the transmittance and the Al-power. The optical band gap dependent refractive index, high-frequency dielectric, and static dielectric constant were calculated.
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页码：1217 / 1223
页数：6
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