Stability of the (0001) surface of the Bi2Se3 topological insulator

被引：0
作者：
O. E. Tereshchenko
K. A. Kokh
V. V. Atuchin
K. N. Romanyuk
S. V. Makarenko
V. A. Golyashov
A. S. Kozhukhov
I. P. Prosvirin
A. A. Shklyaev
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,Joint Institute of Geology, Geophysics, and Mineralogy, Siberian Branch
[3] Russian Academy of Sciences,Boreskov Institute of Catalysis, Siberian Branch
[4] Russian Academy of Sciences,undefined
来源：
JETP Letters | 2011年 / 94卷
关键词：
JETP Letter; Topological Insulator; Tunneling Conductance; Dirac Cone; Scanning Tunneling Spectroscopy;
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摘要：
The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spectroscopy. No intrinsic bismuth and selenium oxides are formed on the surface after a month of storage in air. Atomically flat surfaces with macroscopic sizes (∼1 cm2) and rms roughness less than 0.1 nm have been prepared, and (1 × 1)-(0001) Bi2Se3 atomic structure has been resolved. The tunneling conductance measurements have shown that the energy dependence of the surface density of states is quasilinear in the band gap of Bi2Se3.
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页码：465 / 468
页数：3
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