Influence of single-ionized oxygen vacancies on the generation of ferromagnetism in SnO2 and SnO2:Cr nanowires

被引:0
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作者
D. Montalvo
V. Gómez
W. de la Cruz
S. Camacho-López
I. Rivero
K. Carrera
V. Orozco
C. Santillán
J. Matutes
M. Herrera-Zaldívar
机构
[1] Centro de Investigación Científica y de Educación Superior de Ensenada,Instituto de Química
[2] Universidad Nacional Autónoma de México,Departamento de Óptica
[3] Centro de Nanociencias y Nanotecnología-Universidad Nacional Autónoma de México,undefined
[4] Centro de Investigación Científica y de Educación Superior de Ensenada,undefined
[5] Centro de Graduados e Investigación del Instituto Tecnológico de Tijuana,undefined
[6] Centro de Investigación en Materiales Avanzados,undefined
来源
Applied Physics A | 2023年 / 129卷
关键词
Tin oxide; Dilute magnetic semiconductors; Point defects; Electron paramagnetic resonance; Cathodoluminescence;
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摘要
In this work, we report the influence of single-ionized oxygen vacancies (VO′\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V^{\prime}_{{\text{O}}}$$\end{document}) as a spin ½ system in the ferromagnetic response of undoped and Cr-doped SnO2 nanowires. For this study, undoped and Cr-doped SnO2 nanowires were synthesized by a thermal evaporation method. Raman, Auger, and X-ray photoelectron spectroscopies confirmed the incorporation of Cr3+ ions in the SnO2 lattice. Electron paramagnetic resonance measurements demonstrated the presence of single-ionized oxygen vacancies (VO′\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V^{\prime}_{{\text{O}}}$$\end{document}) in undoped and Cr-doped nanowires. Complementarily, cathodoluminescence measurements confirmed the presence of VO defects in the samples. Magnetic measurements revealed FM behavior from the undoped SnO2 and Cr-doped SnO2 nanowires, showing magnetization saturation values (MS) of ± 1 × 10–3 and ± 1.6 × 10–3 emu/g, respectively, and magnetic coercivity values (HC) of 180 and 200 Oe. We assign the FM response of nanowires to the presence of single ionized VO′\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V^{\prime}_{{\text{O}}}$$\end{document} acting as a spin ½ system and to the alignment of magnetic moments of Cr3+ ions, finding that VO′\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$V^{\prime}_{{\text{O}}}$$\end{document} defects dominate in the FM generation.
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