Influence of the degree of disorder of amorphous solids on the intensity of light scattering by acoustic phonons

被引:0
作者
N. N. Ovsyuk
V. N. Novikov
机构
[1] Siberian Branch of the Russian Academy of Sciences,United Institute of Geology, Geophysics, and Mineralogy
[2] Siberian Branch of the Russian Academy of Sciences,Institute of Automation and Electrical Measurements
来源
Journal of Experimental and Theoretical Physics | 1998年 / 87卷
关键词
Spectroscopy; Silicon; Field Theory; Elementary Particle; Quantum Field Theory;
D O I
暂无
中图分类号
学科分类号
摘要
It is observed experimentally that in the low-frequency Raman light scattering spectrum of amorphous porous silicon the boson peak situated in the acoustic range is more sensitive to the structural order than the optical mode presently used to determine the degree of disorder. It is shown that this is because, unlike the coefficient of interaction with optical vibrations, the coefficient of interaction between light and acoustic vibrations contains an additional factor, the square of the reciprocal correlation length of the vibrational excitations, i.e., the intensity of light scattering by acoustic phonons has an additional dependence on the degree of disorder.
引用
收藏
页码:175 / 178
页数:3
相关论文
共 56 条
  • [1] Tsu R.(1982)undefined Appl. Phys. Lett. 40 534-undefined
  • [2] Gonzalez-Hernandez J.(1988)undefined Appl. Phys. Lett. 52 1675-undefined
  • [3] Chao S. S.(1984)undefined Solid State Commun. 52 363-undefined
  • [4] Lee S. C.(1984)undefined Jpn. J. Appl. Phys. 23 824-undefined
  • [5] Tanaka K.(1986)undefined Superlatt. Microstruct. 2 581-undefined
  • [6] Bustarret E.(1992)undefined Solid State Commun. 83 461-undefined
  • [7] Hachicha M. A.(1996)undefined Thin Solid Films 276 134-undefined
  • [8] Brunel M.(1992)undefined Appl. Phys. Lett. 61 563-undefined
  • [9] Okada T.(1984)undefined J. Non-Cryst. Solids 66 109-undefined
  • [10] Iwaki T.(1991)undefined Science 253 539-undefined