Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

被引:0
作者
Liu H. [1 ]
Wang T. [1 ]
Jiang Q. [2 ]
Hogg R. [2 ]
Tutu F. [1 ]
Pozzi F. [1 ]
Seeds A. [1 ]
机构
[1] Department of Electronic and Electrical Engineering, University College London
[2] Centre for Nanoscience and Technology, University of Sheffield, North Campus, Sheffield S3 7HQ, Broad Lane
关键词
D O I
10.1038/nphoton.2011.120
中图分类号
学科分类号
摘要
The realization of semiconductor laser diodes on Si substrates would permit the creation of complex optoelectronic circuits, enabling chip-to-chip and system-to-system optical communications. Direct epitaxial growth of III-V semiconductor materials on Si or Ge is one of the most promising candidates for the fabrication of electrically pumped light sources on a Si platform. Here, we describe the first quantum-dot laser to be realized on a Ge substrate. To fabricate the laser, a single-domain GaAs buffer layer was first grown on the Ge substrate using the Ga prelayer technique. A long-wavelength InAs/GaAs quantum-dot structure was then fabricated on the high-quality GaAs buffer layer. Lasing at a wavelength of 1,305 nm with a low threshold current density of 55.2 A cm-2 was observed under continuous-wave current drive at room temperature. The results suggest that long-wavelength InAs/GaAs quantum-dot lasers on Si substrates may be realized by epitaxial growth on Ge-on-Si substrates. © 2011 Macmillan Publishers Limited. All rights reserved.
引用
收藏
页码:416 / 419
页数:3
相关论文
共 27 条
  • [1] Won R., Integrating silicon photonics, Nature Photon., 4, pp. 498-499, (2010)
  • [2] Liang D., Bowers J.E., Recent progress in lasers on silicon, Nature Photon., 4, pp. 511-517, (2010)
  • [3] Reed G.T., Mashanovich G., Gardes F.Y., Thomson D.J., Silicon optical modulators, Nature Photon., 4, pp. 518-526, (2010)
  • [4] Michel J., Liu J., Kimerling L.C., High-performance Ge-on-Si photodetector, Nature Photon., 4, pp. 527-534, (2010)
  • [5] Leuthold J., Koos C., Freude W., Nonlinear silicon photonics, Nature Photon., 4, pp. 535-544, (2010)
  • [6] Chen R., Et al., Nanolasers grown on silicon, Nature Photon., 5, pp. 170-175, (2011)
  • [7] Fischer R., Et al., Low threshold laser operation at room temperature in GaAs/(Al,Ga) As structures grown directly on (100)Si, Appl. Phys. Lett., 48, pp. 1360-1361, (1986)
  • [8] Fischer R., Et al., Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy, J. Appl. Phys., 58, pp. 374-381, (1985)
  • [9] Akatsu T., Deguet C., Sanchez L., Allibert F., Rouchon D., Signamarcheix T., Richtarch C., Boussagol A., Loup V., Mazen F., Hartmann J.-M., Campidelli Y., Clavelier L., Letertre F., Kernevez N., Mazure C., Germanium-on-insulator (GeOI) substrates-A novel engineered substrate for future high performance devices, Materials Science in Semiconductor Processing, 9, 4-5 SPEC. ISS., pp. 444-448, (2006)
  • [10] Currie M.T., Samavedam S.B., Langdo T.A., Leitz C.W., Fitzgerald E.A., Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing, Applied Physics Letters, 72, 14, pp. 1718-1720, (1998)