Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots

被引:0
作者
Ching-I Shih
Chien-Hung Lin
Shin-Chin Lin
Ta-Chun Lin
Kien Wen Sun
Oleksandr (Alex) Voskoboynikov
Chien-Ping Lee
Yuen-Wuu Suen
机构
[1] National Chiao Tung University,Department of Applied Chemistry
[2] National Chiao Tung University,Department of Electronics Engineering
[3] National Chung Hsing University,Institute of Nanoscience
来源
Nanoscale Research Letters | / 6卷
关键词
Acoustic Phonon; Detection Energy; Cross Transition; Longitudinal Acoustical; Diamagnetic Shift;
D O I
暂无
中图分类号
学科分类号
摘要
In this report, the influence of the intrinsic transitions between bound-to-delocalized states (crossed states or quasicontinuous density of electron-hole states) on photoluminescence excitation (PLE) spectra of InAs quantum dots (QDs) was investigated. The InAs QDs were different in size, shape, and number of bound states. Results from the PLE spectroscopy at low temperature and under a high magnetic field (up to 14 T) were compared. Our findings show that the profile of the PLE resonances associated with the bound transitions disintegrated and broadened. This was attributed to the coupling of the localized QD excited states to the crossed states and scattering of longitudinal acoustical (LA) phonons. The degree of spectral linewidth broadening was larger for the excited state in smaller QDs because of the higher crossed joint density of states and scattering rate.
引用
收藏
相关论文
共 97 条
[1]  
Arakawa Y(1986)Quantum Well Lasers-Gain, Spectra, Dynamics IEEE J Quantum Electron QE-22 1887-9
[2]  
Yariv A(2005)Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature Appl Phys Letts 86 191106-4117
[3]  
Bhattacharya P(2003)Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate Appl Phys Letts 83 1704-6832
[4]  
Su XH(2008)Multiple excitons and the electron-phonon bottleneck in semiconductor quantum dots: An ab initio perspective Chem Phys Letts 460 1-392
[5]  
Chakrabarti S(1999)Efficient Carrier Relaxation Mechanism in InGaAs/GaAs Self-Assembled Quantum Dots Based on the Existence of Continuum States Phys Rev Letts 82 4114-948
[6]  
Ariyawansa G(2001)Photoluminescence Up-Conversion in Single Self-Assembled InAs/GaAs Quantum Dots Phys Rev Letts 87 207401-undefined
[7]  
Perera AGU(2001)Charged and neutral exciton complexes in individual self-assembled In.(Ga). As quantum dots Phys Rev B 63 073307-undefined
[8]  
Qiu Y(2005)Temperature-Dependent Photoluminescence of Self-Assembled (In,Ga)As Quantum, Dots on GaAs (100): Carrier Redistribution through Low-Energy Continuous States Jap J Appl Phys 44 6829-undefined
[9]  
Uhl D(2000)Excitonic Absorption in a Quantum Dot Phys Rev Lett 85 389-undefined
[10]  
Chacon R(2002)Excitonic Polarons in Semiconductor Quantum Dots Phys Rev Letts 88 146803-undefined