Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films

被引：0
作者：
D. L. Mo
W. B. Wang
Q. Cai
机构：
[1] Fudan University,State Key Laboratory of Surface Physics and Department of Physics
[2] Collaborative Innovation Center of Advanced Microstructures,undefined
来源：
Nanoscale Research Letters | 2016年 / 11卷
关键词：
Bi; Te; ultrathin films; Exfoliation; Thickness influence; Weak antilocalization; Shubnikov de Haas oscillations;
D O I：
暂无
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学科分类号：
摘要：
In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction plays a dominant role. The Fermi level is found to be 81 meV above the Dirac point, and the carrier mobility can reach ~6030 cm2/(Vs) for the 10-nm film. When the film thickness decreases from 30 to 10 nm, the Fermi level will move 8 meV far from the bulk valence band. The coefficient α in the Hikami-Larkin-Nagaoka equation is shown to be ~0.5, manifesting that only the bottom surface of the Bi2Te3 ultrathin films takes part in transport conductions. These will pave the way for understanding thoroughly the surface transport properties of topological insulators.
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共 249 条
[1]  
Hasan MZ(2010)Colloquium: Topological insulators Rev Mod Phys 82 3045-undefined
[2]  
Kane CL(2011)Opportunities in chemistry and materials science for topological insulators and their nanostructures Nat Chemistry 3 845-undefined
[3]  
Kong DS(2008)Superconducting proximity effect and Majorana fermions at the surface of a topological insulator Phys Rev Lett 100 096407-undefined
[4]  
Cui Y(2002)A modular functor which is universal for quantum computation Commun Math Phys 227 605-undefined
[5]  
Fu L(2009)Observation of a large-gap topological-insulator class with a single Dirac cone on the surface Nat Phys 5 398-undefined
[6]  
Kane CL(2009)Experimental realization of a three- dimensional topological insulator, Bi Science 325 178-undefined
[7]  
Freedman MH(2009)Te Phys Rev Lett 103 146401-undefined
[8]  
Larsen M(2010)Observation of time-reversal-protected single-Dirac-cone topological-insulator states in Bi Nat Materials 9 225-undefined
[9]  
Wang Z(2010)Te Phys Rev Lett 105 176602-undefined
[10]  
Xia Y(2012) and Sb Nano Lett 12 1170-undefined
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