Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

被引：1
|
作者：
Zhu Y. [1 ]
Ni H. [1 ]
Wang H. [1 ]
He J. [1 ]
Li M. [1 ]
Shang X. [1 ]
Niu Z. [1 ]
机构：
[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Optoelectronics Letters | 2011年 / 7卷 / 5期
基金：
中国国家自然科学基金;
关键词：
GaAs; Molecular Beam Epitaxy; Quantum Well; Apply Physic Letter; Threshold Current Density;
D O I：
10.1007/s11801-011-1032-9
中图分类号：
学科分类号：
摘要：
The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported. © 2011 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
引用
收藏
页码：325 / 329
页数：4
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