Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

被引：0

作者：

Yuan-Yuan Xue

Zu-Jun Wang

Min-Bo Liu

Rui Xu

Hao Ning

Wen Zhao

Bao-Ping He

Zhi-Bin Yao

Jiang-Kun Sheng

Wu-Ying Ma

Guan-Tao Dong

机构：

[1] Northwest Institute of Nuclear Technology,The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

[2] Xiangtan University,School of Materials Science and Engineering

来源：

Nuclear Science and Techniques | 2019年 / 30卷

关键词：

Co gamma rays; Transient effects; CMOS image sensor (CIS); Geant4;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.

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