Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

被引:0
作者
Yuan-Yuan Xue
Zu-Jun Wang
Min-Bo Liu
Rui Xu
Hao Ning
Wen Zhao
Bao-Ping He
Zhi-Bin Yao
Jiang-Kun Sheng
Wu-Ying Ma
Guan-Tao Dong
机构
[1] Northwest Institute of Nuclear Technology,The State Key Laboratory of Intense Pulsed Radiation Simulation and Effect
[2] Xiangtan University,School of Materials Science and Engineering
来源
Nuclear Science and Techniques | 2019年 / 30卷
关键词
Co gamma rays; Transient effects; CMOS image sensor (CIS); Geant4;
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中图分类号
学科分类号
摘要
The objective of this work is to analyze the transient effects of 60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.
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