Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films

被引:0
作者
M. Sumets
A. Kostyuchenko
V. Ievlev
S. Kannykin
V. Dybov
机构
[1] University of Texas at Brownsville,Center of Gravitational Wave Astronomy
[2] Voronezh State University,undefined
来源
Journal of Materials Science: Materials in Electronics | 2015年 / 26卷
关键词
Oxygen Vacancy; LiNbO3; Lithium Niobate; Antisite Defect; Oxide Charge;
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学科分类号
摘要
C-oriented polycrystalline lithium niobate (LiNbO3) films have been deposited on Si substrate by the radio-frequency magnetron sputtering method in an Ar atmosphere and Ar + O2 gas mixture. All as-grown LiNbO3 films manifested positive fixed oxide charge regardless of the sputtering conditions. Donor centers are formed in Si substrate because of diffusion of O2 molecules during sputtering process. Thermal annealing (TA) of the deposited films leads to increase in the surface roughness and grain size as well as formation of LiNb3O8 phase in the studied films. Also, TA resulting in the decline of positive oxide charge due to the diffusion of oxygen molecules into LiNbO3 films from air and out-diffusion from Si substrate.
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页码:7853 / 7859
页数:6
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