InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm

被引：0

作者：

N. A. Maleev

A. E. Zhukov

A. R. Kovsh

A. Yu. Egorov

V. M. Ustinov

I. L. Krestnikov

A. V. Lunev

A. V. Sakharov

B. V. Volovik

N. N. Ledentsov

P. S. Kop’ev

Zh. I. Alfërov

D. Bimberg

机构：

[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute

[2] Technische Universität Berlin,Institut für Festkörperphysik

来源：

Semiconductors | 1999年 / 33卷

关键词：

Reflection; GaAs; Structural Characteristic; Active Region; Magnetic Material;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3 µm.

引用

页码：586 / 589

页数：3

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