Intrinsic exchange bias effect in strain-engineered single antiferromagnetic LaMnO3 films反铁磁LaMnO3薄膜中应力调控的交换偏置现象

In this work, epitaxial growth of LaMnO3 thin films on different substrates using pulsed laser deposition under tensile and compressive strain was studied. The intrinsic exchange bias effect was observed in the single A-type antiferromagnetic LaMnO3 films no matter whether the tensile or compressive strain was supplied by the substrates. Due to the lattice mismatch between the film and different substrates, the intense strain can induce MnO6 octahedral rotation in the bottom region of the film neighboring the substrate, which leads to the distortion of MnO6 octahedron and the net magnetic behavior. However, the upper part maintains the original A-type antiferromagnetic order due to strain relaxation. The exchange bias effect in single films is attributed to the coupling between the bottom canted magnetic part and the upper antiferromagnetic region. The observation of exchange bias in single films on different substrates enables the emergence of a new class of biasing components in spintronics, which are based on strain-engineering.