Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

被引：0

作者：

Takeshi Kitatani

Masahiko Kondow

Koji Nakahara

M. C. Larson

Kazuhisa Uomi

机构：

[1] RWCP Optical Interconnection Hitachi Laboratory,Central Research Laboratory

[2] c/o Central Research Laboratory,undefined

[3] Hitachi,undefined

[4] Ltd.,undefined

[5] Lawrence Livermore National Laboratory,undefined

来源：

Optical Review | 1998年 / 5卷

关键词：

semiconductor junction lasers; quantum well;

D O I：

暂无

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学科分类号：

摘要：

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.

引用

页码：69 / 71

页数：2