Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

被引：0
|
作者：
Takeshi Kitatani
Masahiko Kondow
Koji Nakahara
M. C. Larson
Kazuhisa Uomi
机构：
[1] RWCP Optical Interconnection Hitachi Laboratory,Central Research Laboratory
[2] c/o Central Research Laboratory,undefined
[3] Hitachi,undefined
[4] Ltd.,undefined
[5] Lawrence Livermore National Laboratory,undefined
来源：
Optical Review | 1998年 / 5卷
关键词：
semiconductor junction lasers; quantum well;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/ GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.
引用
收藏
页码：69 / 71
页数：2
相关论文
共 50 条
  • [21] CARRIER-TEMPERATURE AND WAVELENGTH-SWITCHING IN GAAS SINGLE-QUANTUM-WELL LASER DIODE
    TOKUDA, Y
    FUJIWARA, K
    TSUKADA, N
    KOJIMA, K
    HAMANAKA, K
    NAKAYAMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L931 - L933
  • [22] 1.3μm double quantum well GalnNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth
    Gollub, D
    Moses, S
    Forchel, A
    ELECTRONICS LETTERS, 2004, 40 (19) : 1181 - 1182
  • [23] LASING WAVELENGTH OF AN ASYMMETRIC DOUBLE QUANTUM-WELL LASER DIODE
    TOKUDA, Y
    MATSUI, T
    FUJIWARA, K
    TSUKADA, N
    NAKAYAMA, T
    APPLIED PHYSICS LETTERS, 1987, 51 (04) : 209 - 211
  • [24] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS
    BLOOD, P
    COLAK, S
    KUCHARSKA, AI
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 599 - 601
  • [25] High-performance 1.3-μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
    Liu, H. Y.
    Badcock, T. J.
    Groom, K. M.
    Hopkinson, M.
    Gutierrez, M.
    Childs, D. T.
    Jin, C.
    Hogg, R. A.
    Sellers, I. R.
    Mowbray, D. J.
    Skolnick, M. S.
    Beanland, R.
    Robbins, D. J.
    SEMICONDUCTOR LASERS AND LASER DYNAMICS II, 2006, 6184
  • [26] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
    Nakahara, K
    Kondow, M
    Kitatani, T
    Larson, MC
    Uomi, K
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) : 487 - 488
  • [27] Room-temperature operation of npn-AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-μm wavelength
    Shirao, Mizuki
    Sato, Takashi
    Sato, Noriaki
    Nishiyama, Nobuhiko
    Arai, Shigehisa
    OPTICS EXPRESS, 2012, 20 (04): : 3983 - 3989
  • [28] Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Yang, X
    Heroux, JB
    Jurkovic, MJ
    Wang, WI
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) : 128 - 130
  • [29] Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates
    Yamada, M
    Anan, T
    Tokutome, K
    Kamei, A
    Nishi, K
    Sugou, S
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (07) : 774 - 776
  • [30] Temperature dependence of gain characteristics in p-doped 1.3-μm InAs quantum dot laser
    Yukutake, Tetsutaro
    Ishida, Mitsuru
    Hatori, Nobuaki
    Sudo, Hisao
    Yamamoto, Tsuyoshi
    Nakata, Yoshiaki
    Ebe, Hiroji
    Sugawara, Mitsuru
    Arakawa, Yasuhiko
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 563 - 566
12345