Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations

被引：0
|
作者：
Binh Duong Nguyen
Melissa Roder
Andreas Danilewsky
Johannes Steiner
Peter Wellmann
Stefan Sandfeld
机构：
[1] Forschungszentrum Jülich GmbH,Institute for Advanced Simulations – Materials Data Science and Informatics (IAS
[2] Albert-Ludwigs-Universität Freiburg,9)
[3] Friedrich-Alexander University Erlangen-Nuremberg,Kristallographie
[4] RWTH Aachen University,Crystal Growth Lab, Materials Department 6
来源：
Journal of Materials Research | 2023年 / 38卷
关键词：
Defects; Semiconducting materials; Mechanical properties; Computer simulation; Image analysis;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1254 / 1265
页数：11
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