Photoluminescence of anodized silicon carbide

被引：0
|
作者：
V. F. Agekyan
Yu. A. Stepanov
A. A. Lebedev
A. A. Lebedev
Yu. V. Rud’
机构：
[1] St. Petersburg State University,A. F. Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 1997年 / 31卷
关键词：
Silicon; Carbide; Magnetic Material; Silicon Carbide; Decay Time;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.
引用
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页码：202 / 203
页数：1
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