Photoluminescence of anodized silicon carbide

被引：0

作者：

V. F. Agekyan

Yu. A. Stepanov

A. A. Lebedev

Yu. V. Rud’

机构：

[1] St. Petersburg State University,A. F. Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Semiconductors | 1997年 / 31卷

关键词：

Silicon; Carbide; Magnetic Material; Silicon Carbide; Decay Time;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The luminescence of single-crystalline 6H-SiC plates after electrochemical etching has been investigated. The photoluminescence spectrum was found to change strongly after etching; the decay times of separate bands were determined. Just as in the case of silicon, the change in the photoluminescence could be due to the formation of nanostructures.

引用

页码：202 / 203

页数：1