The effect of ultrasonic treatment on the internal friction in silicon

被引：0
作者：
A. P. Onanko
A. A. Podolyan
I. V. Ostrovskii
机构：
[1] Kiev National University,
来源：
Technical Physics Letters | 2003年 / 29卷
关键词：
Silicon; Point Defect; Internal Friction; Silicon Atom; Ultrasonic Treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature dependence of the internal friction in dislocation-free single crystal silicon after preliminary ultrasonic treatment exhibits a dominating peak at T≈510 K. This effect, reported for the first time, can be explained by the ultrasound-induced rearrangement of point defects related to interstitial silicon atoms.
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页码：634 / 635
页数：1
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