Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser

被引:0
作者
Fei Shan
Jae-Yun Lee
Han-Lin Zhao
Seong Gon Choi
Jung-Hyuk Koh
Sung-Jin Kim
机构
[1] Chungbuk National University,College of Electrical and Computer Engineering
[2] Chung-Ang University,School of Electrical and Electronics Engineering
来源
Electronic Materials Letters | 2021年 / 17卷
关键词
Indium zinc oxide; Femtosecond laser; Solution-processed; Multi-stacked; Post-annealing process;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:451 / 458
页数:7
相关论文
共 110 条
[1]  
Byung Seong B(2006)Level shifter embedded in drive circuits with amorphous silicon TFTs IEEE Trans. Electron Devices 53 494-498
[2]  
Jae Won C(2005)High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications IEEE Electron. Device Lett. 26 731-733
[3]  
Jae Hwan O(2020)Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor Trans. Electr. Electron. Mater. 21 235-248
[4]  
Jang J(2021)Binary Solvent Effects on Thermally Crosslinked Small Molecular Thin Films for Solution Processed Organic Light-Emitting Diodes Electron. Mater. Lett. 17 74-86
[5]  
Chi-Wen C(2019)Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate Electron. Mater. Lett. 15 702-711
[6]  
Ting-Chang C(2020)Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO Electron. Mater. Lett. 16 22-34
[7]  
Po-Tsun L(2020) Gate Dielectric Electron. Mater. Lett. 16 451-456
[8]  
Hau-Yan L(2017)Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers Sci. Adv. 3 e1602640-560
[9]  
Kao-Cheng W(2016)Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution Sci. Rep. 6 33576-2975
[10]  
Chen-Shuo H(2018)A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance Sci. Rep. 8 12825-undefined