Tunnel magnetoresistance of bilayer ferromagnetic nanoparticles with magnetostatic interlayer interaction

被引：0
|
作者：
S. N. Vdovichev
B. A. Gribkov
S. A. Gusev
A. Yu. Klimov
V. L. Mironov
V. V. Rogov
A. A. Fraerman
机构：
[1] Vdovichev, S.N.
[2] Gribkov, B.A.
[3] Gusev, S.A.
[4] Klimov, A. Yu.
[5] Mironov, V.L.
[6] Rogov, V.V.
[7] Fraerman, A.A.
来源：
Vdovichev, S.N. (vdovichev@ipmras.ru) | 1600年 / Allerton Press Incorporation卷 / 76期
关键词：
7;
D O I：
10.3103/S1062873812020098
中图分类号：
学科分类号：
摘要：
A new method for forming submicron magnetic tunnel junctions consisting of two CoFe ferromagnetic layers separated by a dielectric TaOx spacer is proposed. It is shown that the tunnel magnetoresistance effect can be used for studying the features of magnetization reversal of bilayer ferromagnetic nanoparticles.
引用
收藏
页码：183 / 185
页数：2
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