Electrical properties of thin-film composites based on silicon and polypropylene

被引:0
作者
Sh. M. Gasanli
A. Y. Imanova
U. F. Samedova
机构
[1] National Academy of Sciences of Azerbaijan,Institute of Physics
来源
Semiconductors | 2011年 / 45卷
关键词
Single Crystal Silicon; Thin Film Composite; Free Path Length; Electric Power Industry; Room Temperature Conductivity;
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学科分类号
摘要
Results of a study of the current-voltage characteristics of composite resistors (varistors) based on nonpolar propylene and single-crystal silicon are presented. It is shown that the portion of a sharper increase in the current-voltage characteristic is described within the Pool-Frenkel thermal-field effect. It is found that ionized center concentrations Nt increase (1.7–16) × 1022 m−3, carrier free path lengths decrease (4–1.9) × 10−8 m, and potential well heights decrease with increasing filler percentage.
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页码:1085 / 1088
页数:3
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