Monte Carlo Simulation of Carbon Nanotube Devices

被引：0

作者：

Sayed Hasan

Jing Guo

Mani Vaidyanathan

M. A. Alam

Mark Lundstrom

机构：

[1] Purdue University,Department of Electrical and Computer Engineering

[2] University of Florida,Department of Electrical & Computer Engineering

[3] University of Alberta,Department of Electrical and Computer Engineering

来源：

Journal of Computational Electronics | 2004年 / 3卷

关键词：

Monte Carlo; carbon nanotube; CNTFETs;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A self-consistent Monte Carlo simulator for carbon-nanotube, field-effect transistors (CNTFETs) is reported. Transport is simulated in zigzag (n, 0) nanotubes having a coaxial gating geometry, and key aspects of the Monte Carlo implementation are described. The simulator is used to extract the channel mean-free path (MFP) of CNTFETs. Although the mean-free path of acoustic phonons in metallic tubes is known to be very large (on the order of a micron), our results show that the channel MFP is much shorter and bias dependent in CNTFETs, and that CNTFETs therefore operate near the ballistic limit only at channel lengths that are considerably shorter than those required for near-ballistic transport in metallic tubes.

引用

页码：333 / 336

页数：3