Field emission current from a junction field-effect transistor

被引：0
作者：
Mahta Monshipouri
Yaser Abdi
机构：
[1] University of Tehran,Nano
来源：
Journal of Nanoparticle Research | 2015年 / 17卷
关键词：
Field emission; Junction; Field effect; Transistor;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.
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