Wide-gap semiconductors for high-power electronics

被引：0
作者：
A. A. Lebedev
V. E. Chelnokov
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1999年 / 33卷
关键词：
Silicon; Carbide; Magnetic Material; Silicon Carbide; Late Result;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined. It is shown that at present silicon carbide remains the most promising material for high-temperature, radiation-resistant, high-power electronics. Certain factors involving a wide commercial adoption of SiC-based devices are examined.
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页码：999 / 1001
页数：2
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