Magnetic properties of diluted magnetic semiconductor Hg0.89Mn0.11Te

被引:0
|
作者
Zewen Wang
Wanqi Jie
机构
[1] University of International Business and Economics,School of Insurance and Economics
[2] PICC Property and Casualty Company Limited,Disaster Research Center
[3] Northwestern Polytechnical University,School of Materials Science and Engineering
来源
Journal of Wuhan University of Technology-Mater. Sci. Ed. | 2015年 / 30卷
关键词
diluted magnetic semiconductor; Hg; Mn; Te; magnetization;
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中图分类号
学科分类号
摘要
The magnetization of Hg0.89Mn0.11Te single crystal grown by vertical Bridgman method was studied by using superconducting quantum interference device magnetometer (SQUID Magnetometer). First, magnetization measurements were done under various magnetic field strengths from -20 kOe to 20 kOe at 5 K, 15 K, and 77 K, respectively. Then, the magnetizations were measured with continuous changes of temperature in the range from 5 K to 300 K under the magnetic field of 0.1 kOe and 10 kOe, respectively. The modified Brillouin function was well fitted with the data of magnetization vs. magnetic field strength. The analysis indicated that there was an antiferromagnetic exchange coupling among Mn2+ ions. The results of reciprocal susceptibility vs. temperature fit Curie-Weiss law very well at the temperatures above 40 K, but deviate from the law from 5 K to 40 K, which shows that the antiferromagnetic exchange coupling among Mn2+ ions increases in the lower temperature range below 40 K. The experimental result was explained by extending higher-order terms in the calculation of susceptibility and fitted by a power law function. The measurements reveal that Hg0.89Mn0.11Te possesses paramagnetic properties at temperatures from 5 K to 300 K.
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页码:1130 / 1133
页数:3
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