Possibility of doping and using ZnSe, CdS, and GaP layers as down converters of Si and CuInSe2 solar cells

被引：1

作者：

Saidov M.S. ^{[1
]}

机构：

[1] Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan

来源：

Applied Solar Energy (English translation of Geliotekhnika) | 2007年 / 43卷 / 03期

关键词：

GaAs; Solar Cell; ZnSe; GaSb; ZnTe;

D O I：

10.3103/S0003701X07030097

中图分类号：

学科分类号：

摘要：

The possibility and reasonability of developing down converters of Si and CuInSe2 solar cells based on Ge2P- and GaSb-doped GaP, ZnTe, and CdS is discussed. The case is considered when a down converter is a part of a solar cell's p-n heterojunction, and the preparation conditions for the GaP(Ge2GaSb) layer of the Si substrate are specified. © 2007 Allerton Press, Inc.

引用

页码：161 / 163

页数：2

共 12 条

[1]

MacDonald D., McLean K., Mitchell J., Prakash N.K., Deenaparay, De Wolf S., 19th European Photovoltaic Solar Energy Conference, pp. 88-91, (2004)

[2]

Keevers M.J., Green M.A., Solar Energy Materials and Solar Cells, 41-42, pp. 195-204, (1996)

[3]

Saidov M.S., Geliotekhnika [Applied Solar Energy (Engl. Transl.), 40, 3, pp. 5-9, (2004)

[4]

Kutlimuratov A.Yu., Saidov M.S., Saidov A.S., Et al., Geliotekhnika [Applied Solar Energy (Engl. Transl.)], 3, pp. 8-12, (2006)

[5]

Trupke T., Green M.A., Wurfel P., J. Appl. Phys., 92, (2002)

[6]

Shalov A., Richards B.S., Trupke T., Et al., The 3rd World Conference on Photovoltaic Energy Conversion, (2003)

[7]

Trupke T., Green M.A., Wurfel P., J. Appl. Phys., 92, (2002)

[8]

Trupke T., Wurfel P., Green M.A., The 3rd World Conference on Photovoltaic Energy Conversion, (2003)

[9]

Ekins-Daukes N.J., Ballard I., Calder C.D.J., Et al., Appl. Phys. Lett., 82, (2003)

[10]

Wolf M., Proceedings JRE, 48, (1960)

← 1 2 →