Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films

被引：0
作者：
R. Yoshimi
A. Tsukazaki
Y. Kozuka
J. Falson
K.S. Takahashi
J.G. Checkelsky
N. Nagaosa
M. Kawasaki
Y. Tokura
机构：
[1] University of Tokyo,Department of Applied Physics and Quantum
[2] Institute for Materials Research,Phase Electronics Center (QPEC)
[3] Tohoku University,undefined
[4] PRESTO,undefined
[5] Japan Science and Technology Agency (JST),undefined
[6] RIKEN Center for Emergent Matter Science (CEMS),undefined
[7] Present address: Massachusetts Institute of Technology,undefined
[8] Cambridge,undefined
[9] Massachusetts 02139,undefined
[10] USA.,undefined
来源：
Nature Communications | / 6卷
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摘要：
The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1−xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.
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