Coupling length and coupling loss in AlGaAs photonic crystal waveguides

被引：1

作者：

Ali L.M. ^{[1
]}

机构：

[1] Hawler Institute of Technology, Erbil, Kurdistan Region

来源：

J. Opt. | / 2卷 / 187-190期

关键词：

Coupling length; Coupling loss; Metal–semiconductor–semiconductor waveguides; Surface plasmons;

D O I：

10.1007/s12596-016-0367-9

中图分类号：

学科分类号：

摘要：

In this work, we present the theoretical simulation results of a two parallel plasmonic waveguides structure with same geometries. There is a low-index semiconductor AlGaAs layer between the GaAs layer and the metal layer. The coupling length and coupling loss are calculated at the telecom wavelength (1550 nm) for different structures by employing the finite-difference time domain. © 2016, The Optical Society of India.

引用

页码：187 / 190

页数：3

共 26 条

[21]

Taflove A., Advances in Computational Electrodynamics: The Finite- Difference Time-Domain Method, pp. 561-612, (1998)

[22]

Monemar B., Shih K.K., Pettit G.D., Some optical properties of the AlxGa1-xAs alloys system, J. Appl. Phys., 47, pp. 2604-2613, (1976)

[23]

Gehrsitz S., Reinhart F.K., Gourgon C., Herres N., Vonlanthen A., Sigg H., The refractive index of AlxGa1-xAs below the band gap: accurate determination and empirical modeling, J. Appl. Phys., 87, 11, pp. 7825-7837, (2000)

[24]

Theye M.L., Investigation of the optical properties of Au by means of thin semitransparent films, Phys. Rev. B, 2, pp. 3060-3078, (1970)

[25]

Lee D.L., Electromagnetic Principles Of Integrated Optics, (1986)

[26]

Soldano L.B., Pennings E.C.M., Optical multi-mode interference devices based on self-imaging: principles and applications, J. Lightw. Technol., 13, 4, pp. 615-627, (1995)

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