RETRACTED ARTICLE: A saboteur and mutant based built-in self-test and counting threshold-based built-in self repairing mechanism for memories

In system on chip (SOC) design, memory occupies a large area, if any defects in the memory that will affect the SOC’s total yield. To avoid this, spare rows and columns are added to the memory. When the fault cells need to be operated, spares rows/columns will be used instead of faulty cells using Built-in self-repair (BISR) logic. Repairing logic includes either row repair/column repair or a combination of both. In this paper, we propose two methods, one is on the memory built-in self-test (BIST) for checking the memory array circuit. In the second method, an optimized BISR is employed to repair the faulty memory cells based upon the Built-in redundancy analysis. In the BIST method, our proposed method injects the faults into memory by using two fault injection techniques called saboteurs and mutants with optimized test pattern logic. After the injection of the faults in the memory cell, the fault memory is repaired with the proposed counting threshold algorithm for the BISR scheme. Simulation and synthesis results are obtained using Mentor Graphics and Xilinx ISE Design Suite. From our obtained results it can be inferred that various performance measures like power, area, and timing details are reduced in the proposed methods when compared with the existing exhaustive methods. And this proves that the performance of the overall process is found to be enhanced. Thereby yield can also be enhanced with minimum time to market.