Synthesis and characterization of laser ablated TiNi films

被引：0

作者：

A. Kumar

M.R. Alam

J.J. Weimer

L. Sanderson

机构：

[1] Department of Electrical Engineering,

[2] University of South Alabama,undefined

[3] Mobile,undefined

[4] AL 36688 (Fax: +1-334/460-6028,undefined

[5] E-mail: akumar@usamail.usouthal.edu),undefined

[6] Department of Chemistry,undefined

[7] University of Alabama in Huntsville,undefined

[8] Huntsville,undefined

[9] AL 35899 ,undefined

来源：

Applied Physics A | 1999年 / 69卷

关键词：

PACS: 81.15; 68.85;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TiNi thin films with BaTiO3 and PbZr0.52Ti0.48O3 (PZT) as buffer layers were deposited on Si(100) substrates by the pulsed laser deposition (PLD) method. Buffer layers (BaTiO3 and PZT) were deposited at 600 °C in oxygen (O2) environment and TiNi films were deposited on the top of the buffer layer in presence of 15 mTorr nitrogen (N2) at various deposition temperatures (50, 300, and 500 °C). Synthesis and characterization of TiNi films were investigated from the crystallographic point of view by using X-ray diffractometer (XRD) and atomic force microscope (AFM) techniques. It is found that buffer layer of BaTiO3 and PZT have improved the crystallinity of TiNi films deposited at higher temperatures. The TiNi/PZT film was uniform compared to TiNi/BaTiO3 film with the exception of agglomerates that appeared throughout the layer.

引用

页码：S917 / S920