Determination of the critical carrier concentration for the metal–insulator transition in Ga-doped ZnO

被引：0
作者：
M. Sbeta
T. Serin
A. Yildiz
机构：
[1] Ankara Yıldırım Beyazıt University,Department of Energy Systems Engineering, Faculty of Engineering and Natural Sciences
[2] Ankara University,Department of Physics Engineering, Faculty of Engineering
来源：
Journal of Materials Science: Materials in Electronics | 2018年 / 29卷
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摘要：
Ga-doped ZnO (GZO) thin films with different Ga contents (1, 2, 4, 3, and 5 at.%) were successfully deposited on glass substrates using a spin-coating process. The temperature dependent electrical conductivity and room-temperature Hall effect measurements were performed for the films. The variation of electrical conductivity with Ga content was well explained by considering the change in the inelastic diffusion length of electrons. The critical value of carrier concentration for the metal–insulator transition was estimated as 1.77 × 1018 cm−3 for GZO. The critical value of Ga content, where Ga as a donor source becomes ineffective, on the order of 5.25 at.% was obtained.
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页码：14111 / 14115
页数：4
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  • [1] Yildiz A(2016)Influence of grain boundaries on the figure of merit of undoped, Al, In, and Sn doped ZnO thin films for photovoltaic applications Scr. Mater. 113 23-25
  • [2] Uzun S(2017)Flexible polymer/metal/polymer and polymer/metal/inorganic trilayer transparent conducting thin film heaters with highly hydrophobic surface ACS Appl. Mater. Interfaces 9 33129-33136
  • [3] Serin N(2017)In fluence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films J. Alloys Compd. 705 598-601
  • [4] Serin T(2017)An understanding of the band gap shrinkage in Sn-doped ZnO for dye-sensitized solar cells J. Electron. Mater. 46 6739-6744
  • [5] Kang T-W(2018)Abrupt conversion of the conductivity and band-gap in the sputter grown Ga-doped ZnO films by a change in growth ambient: effects of oxygen partial pressure J. Alloys Compd. 742 977-985
  • [6] Kim SH(2012)Electron–electron interactions-based metal-insulator transition in Ga doped ZnO thin films Electron. Mater. Lett. 8 457-462
  • [7] Kim CH(2017)Non-metal to metal transition in n-type ZnO single crystal materials J. Appl. Phys. 121 095704-742
  • [8] Lee S-M(1984)Metallic conductivity near the metal-insulator transition in Cd12xMnxTe Eksp. Teor. Fiz. 86 727-1630
  • [9] Kim H-K(1975)Dielectric anomaly and the metal-insulator transition in n-type silicon Phys. Rev. Lett. 34 1627-1062
  • [10] Park JS(2011)Electrical conduction properties of In-doped ZnO thin films Phys. Scr. 84 065703-9782
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