Thermoelectric properties of porous silicon

被引：0
作者：
J. de Boor
D. S. Kim
X. Ao
M. Becker
N. F. Hinsche
I. Mertig
P. Zahn
V. Schmidt
机构：
[1] Max Planck Institute of Microstructure Physics,Institut für Physik
[2] Martin-Luther-Universität Halle-Wittenberg,undefined
来源：
Applied Physics A | 2012年 / 107卷
关键词：
Porous Silicon; Thermoelectric Property; Thermoelectric Material; Charge Carrier Concentration; Thermoelectric Figure;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.
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页码：789 / 794
页数：5
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