In-plane reorientation induced single laser pulse magnetization reversal

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作者
Y. Peng
D. Salomoni
G. Malinowski
W. Zhang
J. Hohlfeld
L. D. Buda-Prejbeanu
J. Gorchon
M. Vergès
J. X. Lin
D. Lacour
R. C. Sousa
I. L. Prejbeanu
S. Mangin
M. Hehn
机构
[1] Université de Lorraine,Univ Grenoble Alpes, CEA, CNRS, Grenoble INP
[2] CNRS,Anhui High Reliability Chips Engineering Laboratory, Hefei Innovation Research Institute
[3] IJL,MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering
[4] SPINTEC,undefined
[5] Beihang University,undefined
[6] Beihang University,undefined
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摘要
Single Pulse All Optical Switching represents the ability to reverse the magnetization of a nanostructure using a femtosecond single laser pulse without any applied field. Since the first switching experiments carried out on GdFeCo ferrimagnets, this phenomena has been only recently extended to a few other materials, MnRuGa alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse switching can be obtained for a large range of rare earth–transition metal multilayers, making this phenomenon much more general. Surprisingly, the threshold fluence for switching is observed to be independent of the laser pulse duration. Moreover, at high laser intensities, concentric ring domain structures are induced. These striking features contrast to those observed in Gd based materials pointing towards a different reversal mechanism. Concomitant with the demonstration of an in-plane magnetization reorientation, a precessional reversal mechanism explains all the observed features.
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