Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

被引：0
|
作者：
A. I. Yakimov
A. V. Dvurechenskii
V. V. Kirienko
N. P. Stepina
A. I. Nikiforov
V. V. Ul’yanov
S. V. Chaikovskii
V. A. Volodin
M. D. Efremov
M. S. Seksenbaev
T. S. Shamirzaev
K. S. Zhuravlev
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Semiconductors | 2004年 / 38卷
关键词：
Magnetic Material; Electromagnetism; Quantum Efficiency; Layer Density; High Quantum;
D O I：
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中图分类号：
学科分类号：
摘要：
The results of research aimed at the development of high-efficiency Ge/Si-based photodetectors for fiber-optic communication applications are reported. The photodetectors are designed as vertical p-i-n diodes on silicon-on-insulator substrates in combination with waveguide lateral geometry and contain Ge quantum-dot layers. The layer density of quantum dots is 1×1012 cm−2; the dot size in the plane of growth is ∼8 nm. Unprecedentedly high quantum efficiency suitable for the range of telecommunication wavelengths is attained; specifically, in the waveguides illuminated from the end side, the efficiency was as high as 21 and 16% at 1.3 and 1.55 µm, respectively.
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页码：1225 / 1229
页数：4
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