Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

被引:0
作者
Ja Hyun Koo
Tae Sung Kang
Jin Pyo Hong
机构
[1] Hanyang University,Research Institute for Natural Science, Novel Functional Materials and Devices Laboratory, Department of Physics
来源
Journal of the Korean Physical Society | 2012年 / 60卷
关键词
IGZO TFT; Double active layer; Oxygen vacancy;
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摘要
The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZOx (oxygen-ion-poor region) and a-IGZOy (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm2/Vsec, a threshold voltage (VT) of 16.5 V, and ΔVT shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.
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页码:1386 / 1389
页数:3
相关论文
共 63 条
[1]  
Yabuta H.(2006)undefined Appl. Phys. Lett 89 112123-undefined
[2]  
Sano M.(2007)undefined Thin Solid Films 515 6000-undefined
[3]  
Abe K.(2006)undefined J. Non-Cryst. Solids 89 851-undefined
[4]  
Aiba T.(2007)undefined Appl. Phys. Lett 90 242114-undefined
[5]  
Den T.(2008)undefined J. Non-Cryst. Solids 354 2826-undefined
[6]  
Kumomi H.(2008)undefined Thin Solid Films 516 1326-undefined
[7]  
Nomura K.(2008)undefined J. Non-Cryst. Solids 354 2796-undefined
[8]  
Kamiya T.(2007)undefined Thin Solid Films 516 5899-undefined
[9]  
Hosono H.(2008)undefined IEEE Trans. Electron Devices 55 954-undefined
[10]  
Hosono H.(2010)undefined Adv. Mater 22 5512-undefined