Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

被引：0

作者：

Yiming Li

Hsiao-Mei Lu

机构：

[1] National Nano Device Laboratories,Department of Nano Device Technology

[2] National Chiao Tung University,Microelectronics and Information Systems Research Center

[3] University of Illinois at Chicago,Department of Bioengineering

来源：

Journal of Computational Electronics | 2003年 / 2卷

关键词：

nanoscale quantum ring; InAs/GaAs; energy spectra; geometry and magnetic field effects; computer simulation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper, we study the impact of the sizes and the shapes of nanoscale semiconductor quantum rings on the electron and hole energy states. A three-dimensional effective one band Schrödinger equation is solved numerically for semiconductor quantum rings with disk, cut-bottom-elliptical, and conical shapes. For small InAs/GaAs quantum rings we have found a sufficient difference in the ground state and excited state (l = −1) electron energies for rings with the same volume but different shapes. Volume dependence of the electron and hole energies can vary over a wide range and depends significantly on the ring shapes. It is found that a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields.

引用

页码：487 / 490

页数：3

共 33 条

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