Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

被引：0

作者：

O. O. Mamatkarimov

O. Khimmatkulov

I. G. Tursunov

机构：

[1] Namangan Institute of Engineering and Technology,

[2] Tashkent State Technical University named after Islam Karimov,undefined

[3] Chirchik State Pedagogical Institute,undefined

[4] National University of Uzbekistan,undefined

来源：

Physics of the Solid State | 2021年 / 63卷

关键词：

deformation; tensoresistance; silicon; alloying; uniaxial;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：738 / 741

页数：3

共 62 条

[1]

Bakhadirkhanov M. K.(2010)IIUM Surf. Eng. Appl. Electrochem. 46 276-undefined

[2]

Mavlonov G. Kh.(2010)undefined Semiconductors 44 1145-undefined

[3]

Isamov S. B.(2020)undefined Semiconductors 54 466-undefined

[4]

Ayupov K. S.(2018)undefined Semiconductors 52 1027-undefined

[5]

Iliev Kh. V.(2010)undefined Ukr. J. Phys. 55 322-undefined

[6]

Sattorov O. E.(2015)undefined Semiconductors 49 1129-undefined

[7]

Tachilin S. A.(2002)undefined Phys. Solid State 44 727-undefined

[8]

Bakhadirkhanov M. K.(2007)undefined J. Surf. Invest.: X‑ray, Synchrotron Neutron Tech. 1 294-undefined

[9]

Ayupov K. S.(2009)undefined J. Surf. Invest.: X‑ray, Synchrotron Neutron Tech. 3 962-undefined

[10]

Mavlonov G. Kh.(1993)undefined Semiconductors 27 854-undefined