Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

被引：0
|
作者：
D. V. Gulyaev
K. S. Zhuravlev
A. K. Bakarov
A. I. Toropov
机构：
[1] Russian Academy of Sciences,Institute for Semiconductor Physics, Siberian Branch
[2] Novosibirsk State National Research University,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Acceptor Doping; InGaAs Layer; Photoluminescence Band; AlGaAs Layer;
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摘要：
The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p+-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
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页码：224 / 228
页数：4
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