Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

被引：0
|
作者：
D. V. Gulyaev
K. S. Zhuravlev
A. K. Bakarov
A. I. Toropov
机构：
[1] Russian Academy of Sciences,Institute for Semiconductor Physics, Siberian Branch
[2] Novosibirsk State National Research University,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Acceptor Doping; InGaAs Layer; Photoluminescence Band; AlGaAs Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistor heterostructures with donor-acceptor-doped AlGaAs barriers is studied. It is found that the introduction of additional p+-doped AlGaAs layers into the design brings about the appearance of new bands in the photoluminescence spectra. These bands are identified as resulting from transitions (i) in donor-acceptor pairs in doped AlGaAs layers and (ii) between the conduction subband and acceptor levels in the undoped InGaAs quantum well.
引用
收藏
页码：224 / 228
页数：4
相关论文
共 5 条
  • [1] Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers
    Gulyaev, D. V.
    Zhuravlev, K. S.
    Bakarov, A. K.
    Toropov, A. I.
    SEMICONDUCTORS, 2015, 49 (02) : 224 - 228
  • [2] Temperature stability of photoluminescence in heterostructures with InGaAs/GaAs quantum well and Mn-delta-doped acceptor layer in GaAs barrier
    M. V. Dorokhin
    Yu. A. Danilov
    M. M. Prokof’eva
    A. E. Sholina
    Technical Physics Letters, 2010, 36 : 819 - 822
  • [3] Double Pulse Doped InGaAs/AlGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistor Heterostructures
    Egorov, A. Yu.
    Gladyshev, A. G.
    Nikitina, E. V.
    Denisov, D. V.
    Polyakov, N. K.
    Pirogov, E. V.
    Gorbazevich, A. A.
    SEMICONDUCTORS, 2010, 44 (07) : 919 - 923
  • [4] Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
    A. Yu. Egorov
    A. G. Gladyshev
    E. V. Nikitina
    D. V. Denisov
    N. K. Polyakov
    E. V. Pirogov
    A. A. Gorbazevich
    Semiconductors, 2010, 44 : 919 - 923
  • [5] Electron effective masses, nonparabolicity and scattering times in one side delta-doped PHEMT AlGaAs/InGaAs/GaAs quantum wells at high electron density limit
    Safonov, D. A.
    Klochkov, A. N.
    Vinichenko, A. N.
    Sibirmovsky, Yu D.
    Kargin, N. I.
    Vasil'evskii, I. S.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 133
1