The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface

被引：0
作者：
S. Yu. Davydov
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Semiconductors | 1997年 / 31卷
关键词：
Numerical Calculation; Electron State; Magnetic Material; Local State; Metal Atom;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The generalized Anderson-Haldane band model of a semiconductor is used to consider the influence of quasi-localized electron states in the band gap on states induced by metal atoms adsorbed on the semiconductor surface. The formation of the Schottky barrier is discussed for low degrees of metal cover. Numerical calculations were performed for the metal-p-GaAs (110) system.
引用
收藏
页码：1062 / 1066
页数：4
相关论文
共 23 条
  • [1] Mönch W.(1990)undefined Rep. Prog. Phys. 53 221-undefined
  • [2] Spicer W. E.(1980)undefined Phys. Rev. Lett. 44 420-undefined
  • [3] Lindau I.(1994)undefined Appl. Phys. 75 4558-undefined
  • [4] Skeath P.(1995)undefined Fiz. Tekh. Poluprovodn. 29 1828-undefined
  • [5] Su C. Y.(1989)undefined Phys. Rev. B 40 1947-undefined
  • [6] Chye P.(1988)undefined Europhys. Lett. 7 275-undefined
  • [7] Waldrop J. R.(1995)undefined Fiz. Tekh. Tela 37 2749-undefined
  • [8] Andreev A. N.(1976)undefined Phys. Rev. B 13 2553-undefined
  • [9] Lebedev A. A.(1989)undefined Phys. Rev. B 40 5810-undefined
  • [10] Rastegaeva M. G.(1983)undefined Phys. Rev. B 27 3592-undefined
123