Seedless growth of zinc oxide flower-shaped structures on multilayer graphene by electrochemical deposition

被引:0
作者
Nur Suhaili Abd Aziz
Tomoya Nishiyama
Nurul Izni Rusli
Mohamad Rusop Mahmood
Kanji Yasui
Abdul Manaf Hashim
机构
[1] Universiti Teknologi Malaysia,Malaysia
[2] Nagaoka University of Technology,Japan International Institute of Technology
[3] Universiti Malaysia Perlis,Department of Electrical Engineering
[4] Universiti Teknologi MARA,Faculty of Engineering Technology
[5] MIMOS Berhad,Faculty of Electrical Engineering
[6] Technology Park Malaysia,undefined
来源
Nanoscale Research Letters | / 9卷
关键词
Graphene; Zinc oxide; Electrochemical deposition; Flower-shaped structure; Rod;
D O I
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中图分类号
学科分类号
摘要
A seedless growth of zinc oxide (ZnO) structures on multilayer (ML) graphene by electrochemical deposition without any pre-deposited ZnO seed layer or metal catalyst was studied. A high density of a mixture of vertically aligned/non-aligned ZnO rods and flower-shaped structures was obtained. ML graphene seems to generate the formation of flower-shaped structures due to the stacking boundaries. The nucleation of ZnO seems to be promoted at the stacking edges of ML graphene with the increase of applied current density, resulting in the formation of flower-shaped structures. The diameters of the rods/flower-shaped structures also increase with the applied current density. ZnO rods/flower-shaped structures with high aspect ratio over 5.0 and good crystallinity were obtained at the applied current densities of −0.5 and −1.0 mA/cm2. The growth mechanism was proposed. The growth involves the formation of ZnO nucleation below 80°C and the enhancement of the growth of vertically non-aligned rods and flower-shaped structures at 80°C. Such ZnO/graphene hybrid structure provides several potential applications in sensing devices.
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[1]  
Takagi S(2009)Ge/III-V channel engineering for future CMOS ECS Trans 19 9-20
[2]  
Sugiyama M(2012)Epitaxial-template structure utilizing Ge-on-insulator stripe arrays with nanospacing for advanced heterogeneous integration on Si platform Jpn J Appl Phys 51 06FF04:01-06FF04:05-804
[3]  
Yasuda T(2004)Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE J Quantum Elect 40 800-562
[4]  
Takenaka M(2003)MOVPE growth of GaN on Si(111) substrates J Cryst Growth 248 556-2279
[5]  
Hashim AM(2012)Graphene as a buffer layer for silicon carbide-on-insulator structures Materials 5 2270-2832
[6]  
Anisuzzaman M(2012)Growth of high-density zinc oxide nanorods on porous silicon by thermal evaporation Materials 5 2817-3085
[7]  
Muta S(2013)Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction J Phys D Appl Phys 46 455103-447
[8]  
Sadoh T(2001)Growth of well-aligned carbon nanotube arrays on silicon substrates using porous alumina film as a nanotemplate Appl Phys Lett 79 3083-718
[9]  
Miyao M(2012)Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping Appl Phys Lett 100 193116-1608
[10]  
Kai M(2012)Fabrication of optical device arrays using patterned growth of ZnO nanostructures IEEE T Nanotechnol 11 444-470