Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

被引：0
作者：
Tao Sun
Xiaorong Luo
Jie Wei
Chao Yang
Bo Zhang
机构：
[1] University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices
来源：
Nanoscale Research Letters | / 15卷
关键词：
GaN; Schottky barrier diode (SBD); Breakdown voltage; Silicon substrate;
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摘要：
An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (VON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low VON is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (LAC) of 11 μm. The fabricated SBDs achieve a low VON of 0.68 V with good uniformity, a high on/off current ratio ∼ 1010 at room temperature, a low specific on-resistance (RON,SP) of 1.17 mΩ cm2, and a high Baliga’s figure-of-merit (FOM) of 1051 MW/cm2.
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[1]  
Mishra UK(2002)AlGaN/GaN HEMTs-an overview of device operation and applications Proc IEEE 90 1022-undefined
[2]  
Parikh P(1994)Wide bandgap compound semiconductors for superior high-voltage unipolar power devices IEEE TED 41 1481-undefined
[3]  
Wu YF(2001)Very-high power density AlGaN/GaN HEMTs IEEE TED 48 586-undefined
[4]  
Chow TP(2016)2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga’s figure-of-merit IEEE TED 37 70-undefined
[5]  
Tyagi R(2015)1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon IEEE EDL 36 375-undefined
[6]  
Wu YF(2018)High-Voltage and High-I /I Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination IEEE EDL 39 572-undefined
[7]  
Kapolnek D(2018)A 1.9-kV/2.61-mΩ·cm Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V IEEE EDL 39 1548-undefined
[8]  
Ibbetson JP(2018)Low ON-Resistance GaN Schottky Barrier Diode With High VON Uniformity Using LPCVD Si N Compatible Self-Terminated, Low Damage Anode Recess Technology IEEE EDL 39 859-undefined
[9]  
Parikh P(2012)Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking IEEE EDL 33 357-undefined
[10]  
Keller BP(2010)Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates APE. 3 8-undefined
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