Linearity Analysis of MoTe2-FET based Single Transistor AND Gate Using Non-Equilibrium Green’s Function

Continuous failure of Metal oxide semiconductor field-effect transistors due to short channel effects has motivated researchers to find novel devices like tunnel field-effect transistors and junctionless transistors. The impractical nature of the analysed devices showed that the metal oxide semiconductor field-effect transistor is still the backbone of the industry. In this manuscript, a single transistor-based AND gate is analysed. For designing the gate, a split-gate metal oxide semiconductor field-effect-transistor is used. Due to the physical limitations of Silicon, MoTe2 is considered as the substrate material. To consider all the quantum effects, the Non-equilibrium Green’s function is used to solve the device behavior. The split-gate acts as the input for the designed AND logic structure. For state ‘01’ and ‘10’, different device properties are studied and it is shown that proper conduction does not take place when either of the gates is in OFF-state. For state ‘11’, the analysed device operates as conventional MOSFET, and the drain current–gate voltage characteristics are studied. To investigate the device thoroughly, the effect of parameter variation on device characteristics is examined. The device behavior as an AND gate is confirmed by checking the linearity parameters. It is found that the device can be used as an AND gate with low noise and power dissipation.