Electronic properties of peanut-shaped boron nitride nanotube: density functional theory

被引:0
作者
Rasha K. Abuflaha
Jamal A. Talla
机构
[1] Al Al-Bayt University,Department of Chemistry
[2] Al Al-Bayt University,Department of Physics
来源
Applied Physics A | 2023年 / 129卷
关键词
Boron nitride nanotube; Electronic properties; Peanuts’ shape; CASTEP; DMOL3; DFT;
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摘要
In our study, we create peanut-shaped boron nitride nanotubes by introducing Stone–Wales defects and applying uniaxial tensile strain. We carefully examine the structural and electronic properties by systematically applying different strain levels along the nanotubes' axial direction, both before and after introducing the defects. Our results reveal that Stone–Wales defects have a notable impact on the bond lengths and bond angles within the nanotubes. Furthermore, we conduct a detailed analysis of the band structures for both pristine nanotubes and those with Stone–Wales defects under varying strain conditions. Our findings demonstrate a clear correlation between the changes in the band structures and the density of state diagrams. Importantly, the introduction of Stone–Wales defects induces the appearance of new energy states within the band gap, leading to a significant reduction in the band gap size. Through our calculations, we provide clear evidence that the electronic properties of the nanotubes are distinctly affected by the presence of Stone–Wales defects and the application of tensile strain.
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[21]  
Talla JA(2020)Influence of Stone-Wales defects on the structural and electronic properties of double-walled boron nitride nanotubes: density functional theory Comput. Condens. Matter 22 418-1370
[22]  
Al-Khaza’leh KA(2023)The electronic properties of different chiralities of defected boron nitride nanotubes: theoretical study J. Comput. Electron. 22 11104-4018
[23]  
Ghozlan AA(2022)Combined effect of Stone-Wales defects and titanium doping on electronic properties of a silicon carbide monolayer: DFT Russ. J. Inorg. Chem. 67 571-82
[24]  
Yang X(2020)Effect of titanium impurity on electronic properties of double-walled nanotubes: theoretical approach Semicond. Sci. Technol. 35 1365-967
[25]  
Wu G(2022)Electronic properties of defective boron nitride mono-sheets under the influence of an external electric field Comput. Condens. Matter 30 4003-22
[26]  
Zhou J(2020)Band gap controlling of doped bulk silicon carbide structure under the influence of tensile stress: DFT Semiconductors 54 79-19474
[27]  
Dong J(2019)Band gap opening of doped graphene Stone–Wales defects: simulation study Chin. J. Phys. 59 966-3359
[28]  
Luo M(2011)Effect of uniaxial tensile strength on the electrical properties of doped carbon nanotubes: density functional theory J. Nanosci. Nanotechnol. 11 11-10659
[29]  
Yu Y(2007)Theoretical study on the peanut-shaped dimers and nanotubes consisted of C50 cages Scr. Mater. 57 19469-undefined
[30]  
Jin Z(2008)Stone–Wales transformation in boron nitride nanotubes J. Phys. Chem. C 112 3352-undefined