ESR of interacting manganese centers in gallium arsenide

被引：0
作者：
K. F. Shtel’makh
M. P. Korobkov
I. G. Ozerov
机构：
[1] St. Petersburg State Technical University,
来源：
Semiconductors | 2003年 / 37卷
关键词：
GaAs; Gallium; Coulomb Interaction; Neutral State; Crystal Field;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
ESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn.
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页码：872 / 875
页数：3
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