Features of the formation of Mn doped InAs/GaAs quantum dots by vapor phase epitaxy

被引：0
作者：
M. V. Dorokhin
A. V. Zdoroveishev
E. I. Malysheva
Yu. A. Danilov
B. N. Zvonkov
A. E. Sholina
机构：
[1] Nizhni Novgorod State University,Lobachevsky Physical
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2012年 / 6卷
关键词：
GaAs; Neutron Technique; GaAs Layer; GaAs Buffer Layer; Bulk Diffusion;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A self-organized InAs/GaAs quantum dot (QD) array is doped with Mn. The effect of the Mn concentration on the morphology and QD luminescence properties is investigated. It is found that Mn deltadoping of the GaAs buffer layer before QD growth with a layer concentration of 1014 cm−2 leads to the formation of an array of large QDs with variable composition InxGa1 − xAs. The effect is explained within a model of In and Ga atom interdiffusion.
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页码：511 / 514
页数：3
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