Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

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作者
Fei-Ting Huang
Seong Joon Lim
Sobhit Singh
Jinwoong Kim
Lunyong Zhang
Jae-Wook Kim
Ming-Wen Chu
Karin M. Rabe
David Vanderbilt
Sang-Wook Cheong
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[1] Rutgers University,Rutgers Center for Emergent Materials and Department of Physics and Astronomy
[2] Rutgers University,Department of Physics and Astronomy
[3] Pohang University of Science and Technology,Laboratory for Pohang Emergent Materials and Max Plank POSTECH Center for Complex Phase Materials
[4] National Taiwan University,Center for Condensed Matter Sciences and Center of Atomic Initiative for New Materials
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摘要
Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe2, both between polar variants of the low-temperature(T) Weyl phase, and between this and the high-T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.
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