Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals

被引：0

作者：

B. Wiedemann

J. D. Meyer

D. Jockel

H. C. Freyhardt

B. Birkmann

G. Müller

机构：

[1] Johann Wolfgang Goethe-Universität,

[2] Institut für Kernphysik,undefined

[3] Zentrum für Funktionswerkstoffe GmbH,undefined

[4] Friedrich-Alexander-Universität,undefined

[5] Institut für Werkstoffwissenschaften VI,undefined

来源：

Analytical and Bioanalytical Chemistry | 2001年 / 370卷

关键词：

Silicon; Gallium; Hall Effect; Arsenide; Gallium Arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.

引用

页码：541 / 543

页数：2