Temperature stresses in hetrogeneous barium-titanate-based thermistors

被引：0
|
作者：
Shut V.N. [1 ]
Gavrilov A.V. [1 ]
机构：
[1] Institute of Engineering Acoustics, National Academy of Sciences of Belarus, Vitebsk 210023
来源：
J. Eng. Phys. Thermophys. | 2009年 / 5卷 / 988-990期
关键词：
Barium titanate; Heterogeneous thermistors; PTCR; Temperature stresses;
D O I：
10.1007/s10891-009-0269-7
中图分类号：
学科分类号：
摘要：
Temperature stresses in semiconductor barium-titanate-based ceramics with a layer structure under the action of current loads have been investigated by numerical methods. It has been shown that by optimizing the thickness ratios between the layers and their properties one can markedly decrease the maximum stresses compared to homogeneous thermistors. © 2009 Springer Science+Business Media, Inc.
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页码：988 / 990
页数：2
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